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| SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 7 FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED ZVN2110G D S PARTMARKING DETAIL COMPLEMENTARY TYPE ZVN2110 ZVP2110G D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 100 500 6 20 2 -55 to +150 UNIT V mA A V W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 250 1.5 MIN. TYP. MAX. UNIT 100 0.8 2.4 V V nA A A A 4 mS 75 25 8 7 8 13 13 pF pF pF ns ns ns ns VDD 25V, ID=1A VDS=25 V, VGS=0V, f=1MHz CONDITIONS. ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS= 20V, VDS=0V VDS=100V, VGS=0 VDS=80V, VGS=0V, T=125C(2) VDS=25V, VGS=10V VGS=10V, ID=1A VDS=25V, ID=1A 0.1 20 1 100 2 350 59 16 4 4 4 8 8 DRAIN-SOURCE DIODE CHARACTERISTICS PARAMETER SYMBOL MIN. TYP. MAX. UNIT 0.82 112 CONDITIONS. Diode Forward Voltage (1) Reverse Recovery Time V SD T RR V ns I S=0.32A, V GS=0 I F=0.32A, V GS=0, I R=0.1A (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 387 ZVN2110G TYPICAL CHARACTERISTICS ID(on) -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) 2.0 VGS= 10V 9V 2.0 1.6 1.2 5V 0.8 4V 0.4 3V 0 2 4 6 8 10 VGS= 10V 9V 8V 7V 6V 1.6 1.2 8V 7V 6V 0.8 5V 0.4 4V 3V 0 0 20 40 60 80 100 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics ID(on) -On-State Drain Current (Amps) Saturation Characteristics VDS-Drain Source Voltage (Volts) 10 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2 4 6 8 10 VDS=25V VDS=10V 8 6 4 ID= 1A 500mA 100mA 2 0 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics Transfer Characteristics RDS(on)-Drain Source Resistance () 10 2.4 Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 rc ou -S ain Dr 5 ID= 1A 500mA 100mA R ce an ist es eR n) (o DS VGS=10V ID=1 A VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) 1 1 10 100 20 40 60 80 100 120 140 160 180 VGS-Gate Source Voltage (Volts) Tj-Junction Temperature (C) On-resistance v gate-source voltage Normalised RDS(on) and VGS(th) v Temperature 3 - 388 ZVN2110G TYPICAL CHARACTERISTICS 500 500 gfs-Transconductance (mS) gfs-Transconductance (mS) 400 300 200 100 VDS=25V 400 300 200 100 0 0 2 4 6 8 10 VDS=25V 0 0 0.2 0.4 0.6 0.8 1.0 ID(on)- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage 16 100 VGS-Gate Source Voltage (Volts) 14 12 10 8 6 4 2 0 ID=1A VDS= 20V 50V 80V C-Capacitance (pF) 80 60 40 20 Coss Crss 0 10 20 30 40 50 Ciss 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 389 |
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